Technical parameters/rated power: 57 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.11 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 57 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 18A
Technical parameters/rise time: 28 ns
Technical parameters/Input capacitance (Ciss): 650pF @25V(Vds)
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 57W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Automotive, Power Management, Automotive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR5505TRLPBF
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Infineon | 完全替代 | TO-252-3 |
场效应管(MOSFET) IRFR5505TRLPBF DPAK
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IRFR5505TRLPBF
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International Rectifier | 完全替代 | DPAK-252 |
场效应管(MOSFET) IRFR5505TRLPBF DPAK
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NTD20P06LT4G
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ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR NTD20P06LT4G. 场效应管, MOSFET, P沟道, -60V, 15.5A D-PAK
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