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Model NTD20P06LT4G
Description ON SEMICONDUCTOR NTD20P06LT4G. 场效应管, MOSFET, P沟道, -60V, 15.5A D-PAK
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Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.27  yuan 3.27yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9263) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-60.0 V

 

Technical parameters/rated current:

-15.0 A

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.143 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

65 W

 

Technical parameters/threshold voltage:

1.5 V

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

15.5 A

 

Technical parameters/rise time:

90 ns

 

Technical parameters/Input capacitance (Ciss):

1190pF @25V(Vds)

 

Technical parameters/rated power (Max):

65 W

 

Technical parameters/descent time:

70 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

65000 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

6.22 mm

 

Dimensions/Height:

2.38 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Motor Drive & Control, Power Management, Motor drive and control, po

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTD20P06L-1G NTD20P06L-1G ON Semiconductor 类似代替 TO-251-3
-60V,-15.5A功率MOSFET
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