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Model NTD20P06L-1G

Description -60V,-15.5A功率MOSFET

Brand: ON Semiconductor

Packaging TO-251-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	-60.0 V
Technical parameters/rated current:	-15.5 A
Technical parameters/drain source resistance:	130 mΩ
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	65 W
Technical parameters/Input capacitance:	1.19 nF
Technical parameters/gate charge:	26.0 nC
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	15.5 A
Technical parameters/rise time:	90 ns
Technical parameters/Input capacitance (Ciss):	1190pF @25V(Vds)
Technical parameters/descent time:	70 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	65W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-251-3
Dimensions/Length:	6.73 mm
Dimensions/Width:	2.38 mm
Dimensions/Height:	6.35 mm
Dimensions/Packaging:	TO-251-3
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99