Technical parameters/rated voltage (DC): -55.0 V
Technical parameters/rated current: -18.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.11 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 57 W
Technical parameters/product series: IRFR5505
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: -55.0 V
Technical parameters/Continuous drain current (Ids): -18.0 A
Technical parameters/rise time: 28.0 ns
Technical parameters/Input capacitance (Ciss): 650pF @25V(Vds)
Technical parameters/rated power (Max): 57 W
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR5505TRLPBF
|
Infineon | 完全替代 | TO-252-3 |
场效应管(MOSFET) IRFR5505TRLPBF DPAK
|
||
IRFR5505TRLPBF
|
International Rectifier | 完全替代 | DPAK-252 |
场效应管(MOSFET) IRFR5505TRLPBF DPAK
|
||
NTD20P06LT4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR NTD20P06LT4G. 场效应管, MOSFET, P沟道, -60V, 15.5A D-PAK
|
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