Technical parameters/dissipated power: 800 mW
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 50 @500mA, 10V
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39-3
External dimensions/packaging: TO-39-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Compliant with standards/military grade: Yes
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 类似代替 | 205AA |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
||
2N3019
|
Microsemi | 类似代替 | TO-5-3 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
||
2N3019
|
Central Semiconductor | 类似代替 | TO-205 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
||
2N3019
|
Semicoa | 类似代替 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
|||
2N3019
|
Multicomp | 类似代替 | TO-39 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
||
2N3019
|
CDIL | 类似代替 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
|||
2N3019
|
Semicoa Semiconductor | 类似代替 | TO-5 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
||
2N3019
|
Boca Semiconductor | 类似代替 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
|||
2N3019
|
Infineon | 类似代替 | TO-39 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
||
2N3019S
|
Microsemi | 完全替代 | TO-39-3 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
|
|
Semicoa Semiconductor | 完全替代 | TO-39 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
|
|
Aeroflex | 完全替代 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3
|
|||
JAN2N3019
|
ON Semiconductor | 完全替代 | TO-5-3 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3
|
||
JAN2N3019
|
Raytheon | 完全替代 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3
|
|||
JAN2N3019
|
Semicoa Semiconductor | 完全替代 | TO-5 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3
|
||
|
|
M/A-Com | 类似代替 |
Trans GP BJT NPN 80V 1A 3Pin TO-39 Bulk
|
|||
JAN2N3019S
|
ON Semiconductor | 类似代替 | TO-39-3 |
Trans GP BJT NPN 80V 1A 3Pin TO-39 Bulk
|
||
JAN2N3019S
|
Microsemi | 类似代替 | TO-39 |
Trans GP BJT NPN 80V 1A 3Pin TO-39 Bulk
|
||
JAN2N3019S
|
Motorola | 类似代替 | CASE 79-04 |
Trans GP BJT NPN 80V 1A 3Pin TO-39 Bulk
|
||
JAN2N3019S
|
Semicoa Semiconductor | 类似代替 | TO-39 |
Trans GP BJT NPN 80V 1A 3Pin TO-39 Bulk
|
||
JANTX2N3019S
|
M/A-Com | 类似代替 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
JANTX2N3019S
|
Microsemi | 类似代替 | TO-39-3 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
JANTX2N3019S
|
Semicoa Semiconductor | 类似代替 | TO-39 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
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