Technical parameters/polarity: NPN
Technical parameters/dissipated power: 800 mW
Technical parameters/minimum current amplification factor (hFE): 15
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-5-3
External dimensions/packaging: TO-5-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Compliant with standards/military grade: Yes
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 功能相似 | 205AA |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
2N3019
|
Microsemi | 功能相似 | TO-5-3 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
2N3019
|
Central Semiconductor | 功能相似 | TO-205 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
2N3019
|
Semicoa | 功能相似 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
2N3019
|
Multicomp | 功能相似 | TO-39 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
2N3019
|
CDIL | 功能相似 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
2N3019
|
Semicoa Semiconductor | 功能相似 | TO-5 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
|
2N3019
|
Boca Semiconductor | 功能相似 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
|||
|
2N3019
|
Infineon | 功能相似 | TO-39 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
JANTX2N3019
|
ON Semiconductor | 功能相似 | TO-5-3 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
|
JANTX2N3019
|
Raytheon | 功能相似 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
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