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Model 2N3019S
Description Low power NPN silicon transistor
Product QR code
Packaging TO-39-3
Delivery time
Packaging method Bag
Standard packaging quantity 1
125.25  yuan 125.25yuan
1+:
$ 144.0318
10+:
$ 140.2744
50+:
$ 137.3938
100+:
$ 136.3918
200+:
$ 135.6403
500+:
$ 134.6384
1000+:
$ 134.0122
2000+:
$ 133.3859
Quantity
1+
10+
50+
100+
200+
Price
$144.0318
$140.2744
$137.3938
$136.3918
$135.6403
Price $ 144.0318 $ 140.2744 $ 137.3938 $ 136.3918 $ 135.6403
Start batch production 1+ 10+ 50+ 100+ 200+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(1842) Minimum order quantity(1)
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Technical parameters/dissipated power: 800 mW

Technical parameters/breakdown voltage (collector emitter): 80 V

Technical parameters/minimum current amplification factor (hFE): 50 @500mA, 10V

Technical parameters/rated power (Max): 800 mW

Technical parameters/operating temperature (Max): 200 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 800 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-39-3

External dimensions/packaging: TO-39-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Bag

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards:

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