Technical parameters/forward voltage: 1.2V @9A
Technical parameters/reverse recovery time: 2000 ns
Technical parameters/forward current: 5000 mA
Technical parameters/forward voltage (Max): 1.2V @9A
Technical parameters/forward current (Max): 5 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: B-Package-2
External dimensions/packaging: B-Package-2
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
Compliant with standards/military grade: Yes
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5550
|
Solid State | 功能相似 | 2 |
Rectifier Diode, 1 Phase, 1Element, 3A, 200V V(RRM), Silicon
|
||
1N5550
|
Sensitron Semiconductor | 功能相似 | AXIAL DIODE |
Rectifier Diode, 1 Phase, 1Element, 3A, 200V V(RRM), Silicon
|
||
1N5550
|
Semtech Corporation | 功能相似 | G-4 |
Rectifier Diode, 1 Phase, 1Element, 3A, 200V V(RRM), Silicon
|
||
|
|
Sensitron Semiconductor | 完全替代 | AXIAL DIODE |
Diode Switching Diode 200V 3A 2Pin Case G-4
|
||
JANS1N5550
|
Sensitron Semiconductor | 类似代替 |
Diode Switching 200V 5A 2Pin Case E
|
|||
JANS1N5550
|
Microsemi | 类似代替 | B-Package-2 |
Diode Switching 200V 5A 2Pin Case E
|
||
|
|
Sensitron Semiconductor | 完全替代 | AXIAL DIODE |
Diode Switching Diode 200V 5A 2Pin Case G-4
|
||
|
|
ETC1 | 完全替代 |
Diode Switching Diode 200V 5A 2Pin Case G-4
|
|||
JANTX1N5550
|
Semtech Corporation | 完全替代 | G-4 |
Diode Switching Diode 200V 5A 2Pin Case G-4
|
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