Technical parameters/forward voltage: | 1.2 V |
|
Technical parameters/reverse recovery time: | 2000 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | AXIAL DIODE |
|
Dimensions/Packaging: | AXIAL DIODE |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5550
|
Solid State | 完全替代 | 2 |
Diode Switching 200V 5A 2Pin Case G-4
|
||
1N5550
|
Sensitron Semiconductor | 完全替代 | AXIAL DIODE |
Diode Switching 200V 5A 2Pin Case G-4
|
||
1N5550
|
Semtech Corporation | 完全替代 | G-4 |
Diode Switching 200V 5A 2Pin Case G-4
|
||
|
|
Sensitron Semiconductor | 完全替代 | AXIAL DIODE |
Diode Switching 200V 3A 2Pin Case 301
|
||
JANTXV1N5550
|
Semtech Corporation | 类似代替 | G-4 |
Rectifier Diode, Avalanche, 1 Phase, 1Element, 3A, 200V V(RRM), Silicon, HERMETIC SEALED, G4, 2Pin
|
||
JANTXV1N5550
|
Microsemi | 类似代替 | B-Package-2 |
Rectifier Diode, Avalanche, 1 Phase, 1Element, 3A, 200V V(RRM), Silicon, HERMETIC SEALED, G4, 2Pin
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review