Technical parameters/forward voltage: | 1.2 V |
|
Technical parameters/reverse recovery time: | 2000 ns |
|
Technical parameters/forward current: | 3000 mA |
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Technical parameters/forward current (Max): | 3 A |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | AXIAL DIODE |
|
Dimensions/Packaging: | AXIAL DIODE |
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Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANS1N5550
|
Sensitron Semiconductor | 功能相似 |
Diode Switching 200V 5A 2Pin Case E
|
|||
JANS1N5550
|
Microsemi | 功能相似 | B-Package-2 |
Diode Switching 200V 5A 2Pin Case E
|
||
|
|
Sensitron Semiconductor | 完全替代 | AXIAL DIODE |
Diode Switching 200V 3A 2Pin Case 301
|
||
|
|
ETC1 | 完全替代 |
Diode Switching 200V 3A 2Pin Case 301
|
|||
JANTX1N5550
|
Semtech Corporation | 完全替代 | G-4 |
Diode Switching 200V 3A 2Pin Case 301
|
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