Technical parameters/tolerances: ±5 %
Technical parameters/forward voltage: 1.1V @200mA
Technical parameters/test current: 0.25 mA
Technical parameters/voltage regulation value: 8.2 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35-2
External dimensions/length: 5.08 mm
External dimensions/packaging: DO-35-2
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microchip | 完全替代 | DO-7-2 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
||
|
|
Taitron | 完全替代 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
|||
1N4101
|
Microsemi | 完全替代 | DO-35 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
||
1N4101
|
Central Semiconductor | 完全替代 | DO-35-2 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
||
1N4101
|
Jinan Gude Electronic Device | 完全替代 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
|||
1N4101
|
Knox Semiconductor | 完全替代 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
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