Technical parameters/dissipated power: | 400 mW |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-7-2 |
|
Dimensions/Length: | 7.62 mm |
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Dimensions/Packaging: | DO-7-2 |
|
Compliant with standards/RoHS standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microchip | 功能相似 | DO-7-2 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
||
|
|
Taitron | 功能相似 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
|||
1N4101
|
Microsemi | 功能相似 | DO-35 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
||
1N4101
|
Central Semiconductor | 功能相似 | DO-35-2 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
||
1N4101
|
Jinan Gude Electronic Device | 功能相似 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
|||
1N4101
|
Knox Semiconductor | 功能相似 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
|||
1N4101-1
|
M/A-Com | 功能相似 | DO-35 |
DO-35 8.2V 0.5W(1/2W)
|
||
JAN1N4101-1
|
Microsemi | 完全替代 | DO-35-2 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
||
|
|
Sensitron Semiconductor | 类似代替 | DO-35 |
JANTX 系列 8.2 V ±5% 500 mW 通孔 玻璃 齐纳 二极管 - DO-35
|
||
JANTXV1N4101-1
|
M/A-Com | 类似代替 | DO-35 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
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