Technical parameters/dissipated power: 250 mW
Technical parameters/test current: 0.25 mA
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-35-2
External dimensions/length: 5.08 mm
External dimensions/width: 2.29 mm
External dimensions/height: 2.29 mm
External dimensions/packaging: DO-35-2
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microchip | 功能相似 | DO-7-2 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
||
|
|
Taitron | 功能相似 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
|||
1N4101
|
Microsemi | 功能相似 | DO-35 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
||
1N4101
|
Central Semiconductor | 功能相似 | DO-35-2 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
||
1N4101
|
Jinan Gude Electronic Device | 功能相似 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
|||
1N4101
|
Knox Semiconductor | 功能相似 |
低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
|
|||
1N4101-1
|
M/A-Com | 功能相似 | DO-35 |
DO-35 8.2V 0.5W(1/2W)
|
||
JAN1N4101-1
|
Microsemi | 完全替代 | DO-35-2 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
||
|
|
Sensitron Semiconductor | 类似代替 | DO-35 |
JANTX 系列 8.2 V ±5% 500 mW 通孔 玻璃 齐纳 二极管 - DO-35
|
||
JANTXV1N4101-1
|
M/A-Com | 类似代替 | DO-35 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
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