Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 75.0 A
Technical parameters/drain source resistance: 6.70 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 260W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±16.0 V
Technical parameters/Continuous drain current (Ids): 75.0 A
Technical parameters/Input capacitance (Ciss): 4115pF @25V(Vds)
Technical parameters/dissipated power (Max): 260W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
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|---|---|---|---|---|---|---|
IRFZ14PBF
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STP60NF06L
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™ II,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
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