Technical parameters/frequency: 30 MHz
Technical parameters/rated voltage (DC): -230 V
Technical parameters/rated current: -15.0 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 130 W
Technical parameters/breakdown voltage (collector emitter): 230 V
Technical parameters/maximum allowable collector current: 15A
Technical parameters/minimum current amplification factor (hFE): 80 @1A, 5V
Technical parameters/Maximum current amplification factor (hFE): 160
Technical parameters/rated power (Max): 130 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 130 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/width: 4.8 mm
External dimensions/packaging: TO-3-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SA1962OTU
|
Fairchild | 功能相似 | TO-3-3 |
2SA1962 系列 250 V CE 击穿 17 A PNP 外延硅 晶体管 TO-3P
|
||
2SA1962OTU
|
ON Semiconductor | 功能相似 | TO-3-3 |
2SA1962 系列 250 V CE 击穿 17 A PNP 外延硅 晶体管 TO-3P
|
||
2STA1962
|
ST Microelectronics | 功能相似 | TO-3-3 |
STMICROELECTRONICS 2STA1962 单晶体管 双极, PNP, 230 V, 30 MHz, 130 W, 8 A, 80 hFE
|
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