Technical parameters/frequency: 30 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 130 W
Technical parameters/breakdown voltage (collector emitter): 250 V
Technical parameters/minimum current amplification factor (hFE): 80 @1A, 5V
Technical parameters/rated power (Max): 130 W
Technical parameters/DC current gain (hFE): 80
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -50 ℃
Technical parameters/dissipated power (Max): 130000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SA1962-O(Q)
|
Toshiba | 功能相似 | TO-3-3 |
TO-3PN PNP 230V 15A
|
||
FJA4213OTU
|
ON Semiconductor | 类似代替 | TO-3-3 |
ON Semiconductor FJA4213OTU , PNP 晶体管, 17 A, Vce=250 V, HFE:55, 30 MHz, 3引脚 TO-3P封装
|
||
FJA4213OTU
|
Fairchild | 类似代替 | TO-3-3 |
ON Semiconductor FJA4213OTU , PNP 晶体管, 17 A, Vce=250 V, HFE:55, 30 MHz, 3引脚 TO-3P封装
|
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