Technical parameters/frequency: | 30 MHz |
|
Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 130 W |
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Technical parameters/breakdown voltage (collector emitter): | 250 V |
|
Technical parameters/Maximum allowable collector current: | 17A |
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Technical parameters/minimum current amplification factor (hFE): | 80 @1A, 5V |
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Technical parameters/rated power (Max): | 130 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -50 ℃ |
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Technical parameters/dissipated power (Max): | 130000 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-3-3 |
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Dimensions/Height: | 19.9 mm |
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Dimensions/Packaging: | TO-3-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SA1962-O(Q)
|
Toshiba | 功能相似 | TO-3-3 |
TO-3PN PNP 230V 15A
|
||
FJA4213OTU
|
ON Semiconductor | 类似代替 | TO-3-3 |
ON Semiconductor FJA4213OTU , PNP 晶体管, 17 A, Vce=250 V, HFE:55, 30 MHz, 3引脚 TO-3P封装
|
||
FJA4213OTU
|
Fairchild | 类似代替 | TO-3-3 |
ON Semiconductor FJA4213OTU , PNP 晶体管, 17 A, Vce=250 V, HFE:55, 30 MHz, 3引脚 TO-3P封装
|
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