Technical parameters/polarity: PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 290 @2mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 340
Technical parameters/rated power (Max): 200 mW
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2PB709AS,115
|
Nexperia | 功能相似 | SOT-346 |
MPAK PNP 45V 0.1A
|
||
2PB709ASL,215
|
NXP | 功能相似 | SOT-23-3 |
2PB709ASL 系列 45 V 100 mA 表面贴装 PNP 通用 晶体管 - SOT-23-3
|
||
2PB709ASL,215
|
Nexperia | 功能相似 | SOT-23-3 |
2PB709ASL 系列 45 V 100 mA 表面贴装 PNP 通用 晶体管 - SOT-23-3
|
||
2PB709ASL,235
|
Nexperia | 功能相似 | SOT-23-3 |
TO-236AB PNP 45V 0.1A
|
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