Technical parameters/frequency: 70 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.25 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 290 @2mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 290 @2mA, 10V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2PB709AS,115
|
Nexperia | 完全替代 | SOT-346 |
MPAK PNP 45V 0.1A
|
||
2PB709ASL,235
|
Nexperia | 类似代替 | SOT-23-3 |
TO-236AB PNP 45V 0.1A
|
||
2PB709ASL/DG
|
NXP | 功能相似 | TO-236 |
45 V , 100毫安PNP通用晶体管 45 V, 100 mA PNP general-purpose transistors
|
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