Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 290 @2mA, 10V
Technical parameters/rated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 功能相似 | TO-236 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
|
||
2PB709ASL,235
|
Nexperia | 完全替代 | SOT-23-3 |
双极晶体管 - 双极结型晶体管(BJT) Trans GP BJT PNP 45V 0.1A 3-Pin
|
||
|
|
Philips | 功能相似 |
Small Signal Bipolar Transistor
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|||
2PB709ASW
|
Nexperia | 功能相似 |
Small Signal Bipolar Transistor
|
|||
2PB709ASW
|
NXP | 功能相似 | SOT-323-3 |
Small Signal Bipolar Transistor
|
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