Technical parameters/dissipated power: 25000 mW
Technical parameters/Input capacitance (Ciss): 610pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 25000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NJS | 类似代替 |
INFINEON 2N6802 晶体管, MOSFET, N沟道, 2.5 A, 500 V, 1.5 ohm, 10 V, 4 V
|
|||
2N6802
|
Infineon | 类似代替 | TO-205 |
INFINEON 2N6802 晶体管, MOSFET, N沟道, 2.5 A, 500 V, 1.5 ohm, 10 V, 4 V
|
||
2N6802
|
International Rectifier | 类似代替 |
INFINEON 2N6802 晶体管, MOSFET, N沟道, 2.5 A, 500 V, 1.5 ohm, 10 V, 4 V
|
|||
JANTXV2N6802
|
International Rectifier | 完全替代 | TO-39 |
Power Field-Effect Transistor, 2.5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
|
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