Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.5 Ω
Technical parameters/dissipated power: 25 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/rise time: 30 ns
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 25000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Manufacturing Applications: Power Management, power management
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFF430
|
Semelab | 类似代替 | BCY |
单 N沟道 500 V 2.5 W 重复雪崩 & DV/DT 额定 晶体管-TO-39
|
||
IRFF430
|
Infineon | 类似代替 | TO-205 |
单 N沟道 500 V 2.5 W 重复雪崩 & DV/DT 额定 晶体管-TO-39
|
||
|
IRFF430
|
New Jersey Semiconductor | 类似代替 |
单 N沟道 500 V 2.5 W 重复雪崩 & DV/DT 额定 晶体管-TO-39
|
|||
JANTXV2N6802
|
International Rectifier | 完全替代 | TO-39 |
Power Field-Effect Transistor, 2.5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review