Technical parameters/drain source resistance: 1.50 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 25.0 W
Technical parameters/product series: IRFF430
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 2.50 A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
External dimensions/foot length: 14.2 mm
Physical parameters/weight: 97.0 g
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFF430
|
Semelab | 类似代替 | BCY |
单 N沟道 500 V 2.5 W 重复雪崩 & DV/DT 额定 晶体管-TO-39
|
||
IRFF430
|
Infineon | 类似代替 | TO-205 |
单 N沟道 500 V 2.5 W 重复雪崩 & DV/DT 额定 晶体管-TO-39
|
||
|
IRFF430
|
New Jersey Semiconductor | 类似代替 |
单 N沟道 500 V 2.5 W 重复雪崩 & DV/DT 额定 晶体管-TO-39
|
|||
JANTXV2N6802
|
International Rectifier | 完全替代 | TO-39 |
Power Field-Effect Transistor, 2.5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
|
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