Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 100 mA
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 90 @2mA, 10V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3707
|
Central Semiconductor | 功能相似 | TO-226-3 |
Trans GP BJT NPN 30V 0.2A 3Pin TO-92 Box
|
||
2N3711
|
Central Semiconductor | 功能相似 | TO-226-3 |
Trans GP BJT NPN 30V 0.2A 3Pin TO-92 Box
|
||
ZTX457STZ
|
Diodes Zetex | 功能相似 | TO-92-3 |
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
|
||
ZTX457STZ
|
Diodes | 功能相似 | E-Line-3 |
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
|
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