Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 100 @1mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 400
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/width: 4.19 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 功能相似 |
开关晶体管( PNP硅) Switching Transistor(PNP Silicon)
|
|||
MPS6513
|
Fairchild | 功能相似 | TO-226-3 |
Trans GP BJT NPN 30V 0.2A 3Pin TO-92 Bulk
|
||
|
|
Microsemi | 功能相似 | TO-92 |
Trans GP BJT NPN 30V 0.2A 3Pin TO-92 Bulk
|
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