Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 180
Technical parameters/Maximum current amplification factor (hFE): 660
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 5.21 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5088
|
Central Semiconductor | 功能相似 | TO-92-3 |
放大器晶体管 Amplifier Transistors
|
||
|
|
Micro Electronics | 功能相似 |
放大器晶体管 Amplifier Transistors
|
|||
2N5088
|
Fairchild | 功能相似 | TO-92 |
放大器晶体管 Amplifier Transistors
|
||
2N5088
|
Major Brands | 功能相似 |
放大器晶体管 Amplifier Transistors
|
|||
2N5088
|
Continental Device | 功能相似 | TO-92 |
放大器晶体管 Amplifier Transistors
|
||
2N5088
|
UTC | 功能相似 | TO-92 |
放大器晶体管 Amplifier Transistors
|
||
2N5088
|
ON Semiconductor | 功能相似 | TO-226-3 |
放大器晶体管 Amplifier Transistors
|
||
2N5088
|
TI | 功能相似 |
放大器晶体管 Amplifier Transistors
|
|||
2N5088
|
Samsung | 功能相似 |
放大器晶体管 Amplifier Transistors
|
|||
2N5088TF
|
ON Semiconductor | 功能相似 | TO-92-3 |
2N5088 系列 30 V CE 击穿 0.1 A NPN 通用 放大器 - TO-92
|
||
|
|
Zetex | 功能相似 | TO-92 |
ZTX601 系列 160V 1A NPN 硅 平面 中等功率 达林顿晶体管 TO92
|
||
ZTX601B
|
Diodes Zetex | 功能相似 | TO-92-3 |
ZTX601 系列 160V 1A NPN 硅 平面 中等功率 达林顿晶体管 TO92
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review