Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.3 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 80 @1mA, 5V
Technical parameters/rated power (Max): 360 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-18
External dimensions/packaging: TO-18
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2432
|
Microchip | 功能相似 | TO-18-3 |
NPN硅低功率晶体管 NPN SILICON LOW POWER TRANSISTOR
|
||
|
|
Microsemi | 类似代替 | TO-18 |
TO-18 NPN 30V 0.1A
|
||
|
|
Microsemi | 完全替代 | TO-18 |
TO-18 NPN 30V 0.1A
|
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