Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 30 V |
|
Technical parameters/Maximum allowable collector current: | 0.1A |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-18 |
|
Dimensions/Packaging: | TO-18 |
|
Other/Product Lifecycle: | Active |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2432
|
Microchip | 类似代替 | TO-18-3 |
NPN硅低功率晶体管 NPN SILICON LOW POWER TRANSISTOR
|
||
JAN2N2432
|
Microsemi | 完全替代 | TO-18 |
TO-18 NPN 30V 0.1A
|
||
|
|
Microsemi | 完全替代 | TO-18 |
TO-18 NPN 30V 0.1A
|
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