Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 0.3 W |
|
Technical parameters/breakdown voltage (collector emitter): | 30 V |
|
Technical parameters/Maximum allowable collector current: | 0.1A |
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Technical parameters/minimum current amplification factor (hFE): | 80 @1mA, 5V |
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Technical parameters/rated power (Max): | 300 mW |
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Technical parameters/operating temperature (Max): | 200 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-18 |
|
Dimensions/Packaging: | TO-18 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -65℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bag |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2432
|
Microchip | 完全替代 | TO-18-3 |
NPN硅低功率晶体管 NPN SILICON LOW POWER TRANSISTOR
|
||
|
JAN2N2432
|
Microsemi | 类似代替 | TO-18 |
TO-18 NPN 30V 0.1A
|
||
|
|
Microsemi | 完全替代 | TO-18 |
TO-18 NPN 30V 0.1A
|
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