Technical parameters/dissipated power: 0.8 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-5
External dimensions/packaging: TO-5
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3057A
|
Microsemi | 功能相似 | TO-46-3 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
2N5796
|
Raytheon | 功能相似 |
双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR
|
|||
JAN2N4238
|
Microsemi | 类似代替 | TO-205 |
Trans Npn 60V 1A To39
|
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