Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 30 @250mA, 1V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5796
|
Raytheon | 类似代替 |
双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR
|
|||
JAN2N1890
|
Microsemi | 类似代替 | TO-5 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
JANTX2N5796
|
Microsemi | 类似代替 | TO-78 |
双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR
|
||
JANTX2N5796
|
Motorola | 类似代替 | TO-99 |
双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR
|
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