Technical parameters/dissipated power: 500 mW
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 50 @500mA, 10V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-46-3
External dimensions/packaging: TO-46-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | TO-78-6 |
双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR
|
||
2N5795
|
Raytheon | 功能相似 |
双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR
|
|||
2N5796
|
Raytheon | 功能相似 |
双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR
|
|||
JANTX2N3057A
|
Microsemi | 完全替代 | TO-206 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
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