Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 10V
Technical parameters/rated power (Max): 600 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-78-6
External dimensions/packaging: TO-78-6
Physical parameters/operating temperature: -65℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3057A
|
Microsemi | 功能相似 | TO-46-3 |
低功率NPN硅晶体管 LOW POWER NPN SILICON TRANSISTOR
|
||
2N5796
|
Raytheon | 类似代替 |
双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR
|
|||
JAN2N5796
|
Microsemi | 类似代替 | TO-78 |
双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR
|
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