Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 17.0 A
Technical parameters/drain source resistance: 220 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 140W (Tc)
Technical parameters/input capacitance: 1.95 nF
Technical parameters/gate charge: 66.0 nC
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 10.0 A, 17.0 A
Technical parameters/Input capacitance (Ciss): 1900pF @50V(Vds)
Technical parameters/rated power (Max): 140 W
Technical parameters/dissipated power (Max): 140W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB20NM60-1
|
ST Microelectronics | 类似代替 | TO-262-3 |
N沟道600V - 0.25ヘ - 20A - TO- 247 - TO- 220 / FP - D2 / I2PAK MDmesh⑩功率MOSFET N-channel 600V - 0.25ヘ - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh⑩ Power MOSFET
|
||
STP21NM60ND
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP21NM60ND 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
|
||
STP23NM60ND
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP23NM60ND 功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review