Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 20.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 290 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 192 W
Technical parameters/input capacitance: 1.50 nF
Technical parameters/gate charge: 54.0 nC
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 20.0 A
Technical parameters/rise time: 20 ns
Technical parameters/Input capacitance (Ciss): 1500pF @25V(Vds)
Technical parameters/rated power (Max): 192 W
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 192W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10 mm
External dimensions/width: 4.4 mm
External dimensions/height: 8.95 mm
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB21NM60N-1
|
ST Microelectronics | 类似代替 | TO-262-3 |
N沟道600V - 0.19欧姆 - 17 A TO - 220 / FP / D2 / I2PAK / TO- 247第二代的MDmesh MOSFET N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
|
||
STP21NM60ND
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP21NM60ND 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
|
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