Chip AI consultant
Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.15 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 150 W |
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Technical parameters/threshold voltage: | 4 V |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/Continuous drain current (Ids): | 19.5A |
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Technical parameters/rise time: | 19 ns |
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Technical parameters/Input capacitance (Ciss): | 2100pF @50V(Vds) |
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Technical parameters/rated power (Max): | 150 W |
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Technical parameters/descent time: | 42 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 150W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.4 mm |
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Dimensions/Width: | 4.6 mm |
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Dimensions/Height: | 15.75 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | Power Management, Industrial, Industrial |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP21NM60ND
|
ST Microelectronics | 类似代替 | TO-220-3 |
STMICROELECTRONICS STP21NM60ND 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
|
||
STP22NM60N
|
ST Microelectronics | 类似代替 | TO-220-3 |
STMICROELECTRONICS STP22NM60N 功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V
|
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