Technical parameters/forward voltage: 1.3V @1A
Technical parameters/reverse recovery time: 500 ns
Technical parameters/forward current: 1 A
Technical parameters/Maximum forward surge current (Ifsm): 30 A
Technical parameters/forward voltage (Max): 1.3 V
Technical parameters/forward current (Max): 1 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-204AL-2
External dimensions/length: 5.2 mm
External dimensions/packaging: DO-204AL-2
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RGP10M-E3/54
|
VISHAY | 功能相似 | DO-204AL |
VISHAY RGP10M-E3/54 Fast / Ultrafast Diode, 1kV, 1A, Single, 1.3V, 500ns, 30A
|
||
RGP10M-E3/73
|
Vishay Siliconix | 功能相似 | 2 |
1A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 薄型,高度为 1mm 雪崩整流器 ### 二极管和整流器,Vishay Semiconductor
|
||
RGP10M-E3/73
|
VISHAY | 功能相似 | DO-41 |
1A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 薄型,高度为 1mm 雪崩整流器 ### 二极管和整流器,Vishay Semiconductor
|
||
RGP10M-E3/73
|
Vishay Semiconductor | 功能相似 | DO-204AL-2 |
1A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 薄型,高度为 1mm 雪崩整流器 ### 二极管和整流器,Vishay Semiconductor
|
||
RGP10MEHE3/73
|
VISHAY | 类似代替 | DO-204AL |
Diode Switching 1kV 1A 2Pin DO-204AL Ammo
|
||
RGP10MEHE3/73
|
Vishay Semiconductor | 类似代替 | DO-204AL-2 |
Diode Switching 1kV 1A 2Pin DO-204AL Ammo
|
||
RGP10MHE3/73
|
VISHAY | 类似代替 | DO-204AL |
DIODE GEN PURP 1kV 1A DO204AL
|
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