Technical parameters/reverse recovery time: | 500 ns |
|
Technical parameters/forward voltage (Max): | 1.3V @1A |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | DO-204AL |
|
Dimensions/Packaging: | DO-204AL |
|
Physical parameters/operating temperature: | -65℃ ~ 175℃ |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RGP10M-E3/73
|
Vishay Siliconix | 类似代替 | 2 |
1A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 薄型,高度为 1mm 雪崩整流器 ### 二极管和整流器,Vishay Semiconductor
|
||
RGP10M-E3/73
|
VISHAY | 类似代替 | DO-41 |
1A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 薄型,高度为 1mm 雪崩整流器 ### 二极管和整流器,Vishay Semiconductor
|
||
RGP10M-E3/73
|
Vishay Semiconductor | 类似代替 | DO-204AL-2 |
1A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 薄型,高度为 1mm 雪崩整流器 ### 二极管和整流器,Vishay Semiconductor
|
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