Technical parameters/forward voltage: | 1.3 V |
|
Technical parameters/reverse recovery time: | 500 ns |
|
Technical parameters/forward voltage (Max): | 1.3V @1A |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-41 |
|
Dimensions/Packaging: | DO-41 |
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Physical parameters/operating temperature: | -65℃ ~ 175℃ |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RGP10M-E3/54
|
VISHAY | 功能相似 | DO-204AL |
VISHAY RGP10M-E3/54 Fast / Ultrafast Diode, 1kV, 1A, Single, 1.3V, 500ns, 30A
|
||
RGP10M-E3/73
|
Vishay Siliconix | 功能相似 | 2 |
1A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 薄型,高度为 1mm 雪崩整流器 ### 二极管和整流器,Vishay Semiconductor
|
||
RGP10M-E3/73
|
VISHAY | 功能相似 | DO-41 |
1A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 薄型,高度为 1mm 雪崩整流器 ### 二极管和整流器,Vishay Semiconductor
|
||
RGP10M-E3/73
|
Vishay Semiconductor | 功能相似 | DO-204AL-2 |
1A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 薄型,高度为 1mm 雪崩整流器 ### 二极管和整流器,Vishay Semiconductor
|
||
RGP10MEHE3/73
|
VISHAY | 类似代替 | DO-204AL |
Diode Switching 1kV 1A 2Pin DO-204AL Ammo
|
||
RGP10MEHE3/73
|
Vishay Semiconductor | 类似代替 | DO-204AL-2 |
Diode Switching 1kV 1A 2Pin DO-204AL Ammo
|
||
RGP10MHE3/73
|
VISHAY | 类似代替 | DO-204AL |
DIODE GEN PURP 1kV 1A DO204AL
|
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