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Description MOSFET N-CH 1200V 12A TO-247
Product QR code
Packaging TO-247-3
Delivery time
Packaging method
Standard packaging quantity 1
76.74  yuan 76.74yuan
1+:
$ 88.2556
10+:
$ 84.4184
100+:
$ 83.7277
250+:
$ 83.1905
500+:
$ 82.3463
1000+:
$ 81.9626
2500+:
$ 81.4254
5000+:
$ 80.9649
Quantity
1+
10+
100+
250+
500+
Price
$88.2556
$84.4184
$83.7277
$83.1905
$82.3463
Price $ 88.2556 $ 84.4184 $ 83.7277 $ 83.1905 $ 82.3463
Start batch production 1+ 10+ 100+ 250+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(2301) Minimum order quantity(1)
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Technical parameters/dissipated power: 500W (Tc)

Technical parameters/drain source voltage (Vds): 1200 V

Technical parameters/rise time: 25 ns

Technical parameters/Input capacitance (Ciss): 3400pF @25V(Vds)

Technical parameters/descent time: 17 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 500W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/packaging: TO-247-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXFH12N120 IXFH12N120 IXYS Semiconductor 完全替代 TO-247-3
TO-247AD N-CH 1200V 12A
PDF
IXFH12N120P IXFH12N120P IXYS Semiconductor 类似代替 TO-247-3
IXYS SEMICONDUCTOR IXFH12N120P 功率场效应管, MOSFET, N沟道, 12 A, 1.2 kV, 1.35 ohm, 10 V, 6.5 V
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