Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 500W (Tc)
Technical parameters/drain source voltage (Vds): 1200 V
Technical parameters/Continuous drain current (Ids): 12A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 3400pF @25V(Vds)
Technical parameters/descent time: 17 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFH12N120P
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
IXYS SEMICONDUCTOR IXFH12N120P 功率场效应管, MOSFET, N沟道, 12 A, 1.2 kV, 1.35 ohm, 10 V, 6.5 V
|
||
IXTH12N120
|
IXYS Semiconductor | 完全替代 | TO-247-3 |
MOSFET N-CH 1200V 12A TO-247
|
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