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Model IXFH12N120P
Description IXYS SEMICONDUCTOR IXFH12N120P Power Field Effect Transistor, MOSFET, N-channel, 12 A, 1.2 kV, 1.35 ohm, 10 V, 6.5 V
Product QR code
Brand: IXYS Semiconductor
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
6.3  yuan 6.3yuan
10+:
$ 7.5588
100+:
$ 7.1809
500+:
$ 6.9289
1000+:
$ 6.9163
2000+:
$ 6.8659
5000+:
$ 6.8029
7500+:
$ 6.7525
10000+:
$ 6.7273
Quantity
10+
100+
500+
1000+
2000+
Price
$7.5588
$7.1809
$6.9289
$6.9163
$6.8659
Price $ 7.5588 $ 7.1809 $ 6.9289 $ 6.9163 $ 6.8659
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2022) Minimum order quantity(10)
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Technical parameters/number of channels: 1

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 1.35 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 543 W

Technical parameters/threshold voltage: 6.5 V

Technical parameters/drain source voltage (Vds): 1.2 kV

Technical parameters/Continuous drain current (Ids): 12A

Technical parameters/rise time: 25 ns

Technical parameters/Input capacitance (Ciss): 5400pF @25V(Vds)

Technical parameters/descent time: 34 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 543W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/length: 16.26 mm

External dimensions/width: 5.3 mm

External dimensions/height: 21.46 mm

External dimensions/packaging: TO-247-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXFH12N120 IXFH12N120 IXYS Semiconductor 类似代替 TO-247-3
TO-247AD N-CH 1200V 12A
PDF
IXTH12N120 IXTH12N120 IXYS Semiconductor 类似代替 TO-247-3
MOSFET N-CH 1200V 12A TO-247
PDF

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