Technical parameters/dissipated power: 714W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Input capacitance (Ciss): 6000pF @25V(Vds)
Technical parameters/rated power (Max): 714 W
Technical parameters/dissipated power (Max): 714W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-264-3
External dimensions/packaging: TO-264-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFH120N20P
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
N 通道功率 MOSFET,IXYS HiperFET™ Polar™ 系列 IXYS N 通道功率 MOSFET,具有快速本征二极管 (HiPerFET™) ### MOSFET 晶体管,IXYS IXYS 的一系列高级离散电源 MOSFET 设备
|
||
IXFK120N20P
|
IXYS Semiconductor | 完全替代 | TO-264-3 |
N沟道 200V 120A
|
||
IXFK120N20P
|
Littelfuse | 完全替代 |
N沟道 200V 120A
|
|||
IXTQ120N20P
|
IXYS Semiconductor | 功能相似 | TO-3-3 |
Trans MOSFET N-CH 200V 120A 3Pin(3+Tab) TO-3P
|
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