Technical parameters/dissipated power: | 714 W |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/rise time: | 35 ns |
|
Technical parameters/Input capacitance (Ciss): | 6000pF @25V(Vds) |
|
Technical parameters/descent time: | 31 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 714W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-3-3 |
|
Dimensions/Packaging: | TO-3-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFH120N20P
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
N 通道功率 MOSFET,IXYS HiperFET™ Polar™ 系列 IXYS N 通道功率 MOSFET,具有快速本征二极管 (HiPerFET™) ### MOSFET 晶体管,IXYS IXYS 的一系列高级离散电源 MOSFET 设备
|
||
IXFK120N20P
|
IXYS Semiconductor | 功能相似 | TO-264-3 |
N沟道 200V 120A
|
||
IXFK120N20P
|
Littelfuse | 功能相似 |
N沟道 200V 120A
|
|||
IXTK120N20P
|
IXYS Semiconductor | 功能相似 | TO-264-3 |
Trans MOSFET N-CH 200V 120A 3Pin(3+Tab) TO-264
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review