Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.022 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 714 W
Technical parameters/threshold voltage: 5 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 120 A
Technical parameters/rise time: 35 ns
Technical parameters/Input capacitance (Ciss): 6000pF @25V(Vds)
Technical parameters/descent time: 31 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 714000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 16.26 mm
External dimensions/width: 5.3 mm
External dimensions/height: 21.46 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Power Management, Motor Drive&Control, Motor Drive&Control
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFK120N20P
|
IXYS Semiconductor | 功能相似 | TO-264-3 |
N沟道 200V 120A
|
||
IXFK120N20P
|
Littelfuse | 功能相似 |
N沟道 200V 120A
|
|||
IXTK120N20P
|
IXYS Semiconductor | 功能相似 | TO-264-3 |
Trans MOSFET N-CH 200V 120A 3Pin(3+Tab) TO-264
|
||
IXTQ120N20P
|
IXYS Semiconductor | 功能相似 | TO-3-3 |
Trans MOSFET N-CH 200V 120A 3Pin(3+Tab) TO-3P
|
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