Technical parameters/tolerances: ±5 %
Technical parameters/forward voltage: 1.1V @200mA
Technical parameters/test current: 0.25 mA
Technical parameters/voltage regulation value: 27 V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-213AA-2
External dimensions/length: 3.7 mm
External dimensions/packaging: DO-213AA-2
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 完全替代 | DO-35 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
||
|
|
Knox Semiconductor | 完全替代 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
|||
|
|
Jinan Gude Electronic Device | 完全替代 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
|||
1N4118
|
Micro Commercial Components | 完全替代 | DO-35 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
||
1N4118
|
Central Semiconductor | 完全替代 | DO-35 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
||
JANS1N4118-1
|
Microsemi | 完全替代 | DO-35 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
||
JANTX1N4118-1
|
Microsemi | 完全替代 | DO-213AA-2 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
||
JANTX1N4118-1
|
M/A-Com | 完全替代 | DO-35 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
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