Technical parameters/tolerances: | ±5 % |
|
Technical parameters/forward voltage: | 1.1V @200mA |
|
Technical parameters/dissipated power: | 480 mW |
|
Technical parameters/test current: | 0.25 mA |
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Technical parameters/voltage regulation value: | 27 V |
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Technical parameters/rated power (Max): | 500 mW |
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Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-213AA-2 |
|
Dimensions/Length: | 3.7 mm |
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Dimensions/Packaging: | DO-213AA-2 |
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Physical parameters/operating temperature: | -65℃ ~ 175℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bag |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 完全替代 | DO-35 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
||
|
|
Knox Semiconductor | 完全替代 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
|||
|
|
Jinan Gude Electronic Device | 完全替代 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
|||
1N4118
|
Micro Commercial Components | 完全替代 | DO-35 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
||
1N4118
|
Central Semiconductor | 完全替代 | DO-35 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
||
|
|
M/A-Com | 完全替代 | DO-35 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
||
JANTXV1N4118-1
|
Microsemi | 完全替代 | DO-213AA-2 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
||
JANTXV1N4118-1
|
Aeroflex | 完全替代 | DO-35 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
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