Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 27 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 完全替代 | DO-35 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
||
|
|
Knox Semiconductor | 完全替代 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
|||
|
|
Jinan Gude Electronic Device | 完全替代 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
|||
1N4118
|
Micro Commercial Components | 完全替代 | DO-35 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
||
1N4118
|
Central Semiconductor | 完全替代 | DO-35 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
||
|
|
M/A-Com | 完全替代 | DO-35 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
||
JANTXV1N4118-1
|
Microsemi | 完全替代 | DO-213AA-2 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
||
JANTXV1N4118-1
|
Aeroflex | 完全替代 | DO-35 |
硅500毫安低噪声齐纳二极管 SILICON 500mA LOW NOISE ZENER DIODES
|
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