Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 75.0 W
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/Continuous drain current (Ids): 4.5A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
Customs information/HTS code: 85412900951
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP10P6F6
|
ST Microelectronics | 功能相似 | TO-220-3 |
P沟道60 V , 0.15 I© (典型值) , 10 A STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET采用DPAK和TO- 220封装 P-channel 60 V, 0.15 Ω typ., 10 A STripFET⢠VI DeepGATE⢠Power MOSFET in DPAK and TO-220 packages
|
||
SUP75N06-08
|
Vishay Siliconix | 功能相似 | TO-220 |
MOSFET 60V 75A 250W
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||
SUP75N06-08
|
Visay | 功能相似 |
MOSFET 60V 75A 250W
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