Encapsulation parameters/Encapsulation: SOT-363
External dimensions/packaging: SOT-363
Other/maximum source drain voltage VdsDrain Source Voltage: 60V
Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: 20V
Other/Maximum Drain Current IdDrain Current: 115mA/0.115A
Other/source drain on resistance RdsDrain Source On State Resistance: 7.5Ω@ VGS = 4.5V,ID = 75mA
Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: 1~2.5V
Other/dissipative power PdPower Dissipation: 200mW/0.2W
Other/Specification PDF: __
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002DW
|
Infineon | 功能相似 | SOT-363-6 |
2N7002DW 复合场效应管 60 300mA/0.3A SOT-363/SC70-6 marking/标记 XS 快速开关 双N沟道
|
||
2N7002DW
|
Diodes | 功能相似 | SOT-363 |
2N7002DW 复合场效应管 60 300mA/0.3A SOT-363/SC70-6 marking/标记 XS 快速开关 双N沟道
|
||
2N7002DW
|
UTC | 功能相似 | SOT-363 |
2N7002DW 复合场效应管 60 300mA/0.3A SOT-363/SC70-6 marking/标记 XS 快速开关 双N沟道
|
||
2N7002DW
|
Panjit | 功能相似 | SOT-363 |
2N7002DW 复合场效应管 60 300mA/0.3A SOT-363/SC70-6 marking/标记 XS 快速开关 双N沟道
|
||
2N7002DW
|
ON Semiconductor | 功能相似 | SOT-363-6 |
2N7002DW 复合场效应管 60 300mA/0.3A SOT-363/SC70-6 marking/标记 XS 快速开关 双N沟道
|
||
2N7002DW
|
GMR Semiconductor | 功能相似 |
2N7002DW 复合场效应管 60 300mA/0.3A SOT-363/SC70-6 marking/标记 XS 快速开关 双N沟道
|
|||
2N7002DW
|
CJ | 功能相似 | SC-70-6 |
2N7002DW 复合场效应管 60 300mA/0.3A SOT-363/SC70-6 marking/标记 XS 快速开关 双N沟道
|
||
2N7002DW
|
Fairchild | 功能相似 | SC-70-6 |
2N7002DW 复合场效应管 60 300mA/0.3A SOT-363/SC70-6 marking/标记 XS 快速开关 双N沟道
|
||
2N7002DW-7-F
|
Diodes | 功能相似 | SC-70-6 |
双N沟道增强型场效应晶体管小信号晶体管特点双N沟道MOSFET低导通电阻低栅极阈值电压低输入电容开关速度快吗低输入/输出漏超小型表面贴装封装
|
||
2N7002DW-7-F
|
Diodes Zetex | 功能相似 | SOT-363 |
双N沟道增强型场效应晶体管小信号晶体管特点双N沟道MOSFET低导通电阻低栅极阈值电压低输入电容开关速度快吗低输入/输出漏超小型表面贴装封装
|
||
2N7002DW-7-F
|
Multicomp | 功能相似 | SOT-363 |
双N沟道增强型场效应晶体管小信号晶体管特点双N沟道MOSFET低导通电阻低栅极阈值电压低输入电容开关速度快吗低输入/输出漏超小型表面贴装封装
|
||
2N7002DWL6327
|
Infineon | 完全替代 | SOT-363-6 |
MOSFET 2N-CH 60V 0.3A SOT363
|
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